NSN 5961-00-356-3555
Part Details | THYRISTOR SEMICONDUCTOR DEVICE
5961-00-356-3555 A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N5062A, 2N5062, 415402864001, 415/4/02864/001, 2N5062, 2N5062, 2N5062, RELEASE5555, 742643, 2N5062, 2N5062, 415402864001, 415/4/02864/001, 07715010, 0771-5010, 2N5062, 3227243P3, 322-7243P3, 2N5062, 2N5062, 2N5062, 2N5062, 2N5062, 1T506200, 5961-00-356-3555, 00-356-3555, 5961003563555, 003563555
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | APR 01, 1970 | 00-356-3555 | 33096 ( SEMICONDUCTOR DEVICE, THYRISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-356-3555
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N5062A | C7191 | ADELCO ELEKTRONIK GMBH |
| 2N5062 | C7191 | ADELCO ELEKTRONIK GMBH |
| 415/4/02864/001 | K3902 | BAE SYSTEMS MARITIME SERVICES |
| 2N5062 | 55464 | CENTRAL SEMICONDUCTOR CORP. |
| 2N5062 | 11058 | CSR INDUSTRIES INC |
| 2N5062 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE5555 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 742643 | 89536 | FLUKE CORPORATION |
| 2N5062 | 13977 | FRANEL CORP |
| 2N5062 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 415/4/02864/001 | U4290 | G E C MARCONI S3I LTD COMBAT SYSTEMSIVISION |
| 0771-5010 | 82386 | JAIDINGER MFG. CO., INC.DBA JAICO PRODUCTS |
| 2N5062 | 5V1P1 | ON SEMICONDUCTOR CORPORATION |
| 322-7243P3 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| 2N5062 | 54X10 | RAYTHEON COMPANYDBA RAYTHEON |
| 2N5062 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| 2N5062 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
| 2N5062 | 1MQ07 | SEMICONDUCTOR COMPONENTS INDUSTRIES,LLC |
| 2N5062 | 10346 | SOUTHERN AVIONICS CO. |
| 1T506200 | 10346 | SOUTHERN AVIONICS CO. |
Technical Data | NSN 5961-00-356-3555
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM FORWARD VOLTAGE, PEAK AND 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 125.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE |
| POWER RATING PER CHARACTERISTIC | AE5.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | PLASTIC |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-92 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.205 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.210 INCHES MAXIMUM |
| OVERALL WIDTH | 0.165 INCHES MAXIMUM |
| SPECIFICATION/STANDARD DATA | 80131-RELESE5555 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |
