NSN 5961-00-359-5752
Part Details | TRANSISTOR
5961-00-359-5752 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: JANTX2N5038A, JANTX2N5038, 2N5038, 1510969, 5961003595752, 5961PL1373554, 2N5039, 417405513, 417/4/05513, 339399003, 339399-003, MILS19500439, MIL-S-19500/439, JANTX2N5308, JANTX2N5038, 2910993, 10133072, 70943780002, 7723301, 772330-1, RYN1212303, RYN121230/3, 5961-00-359-5752, 00-359-5752, 5961003595752, 003595752
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | FEB 18, 1974 | 00-359-5752 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-359-5752
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| JANTX2N5038A | C7191 | ADELCO ELEKTRONIK GMBH |
| JANTX2N5038 | C7191 | ADELCO ELEKTRONIK GMBH |
| 2N5038 | 07235 | ALBION ELECTRICAL INDUSTRIES |
| 1510969 | 15476 | COMPAQ FEDERAL LLC |
| 5961003595752 | A00AM | E.C.A ETABLISSEMENT CENTRALDESAPPROVISIONNEMENTS DES FORCES |
| 5961PL1373554 | 9009H | INSPEKTORAT WSPARCIA SIL ZBROJNYCH |
| 2N5039 | 07688 | JOINT ELECTRON DEVICE ENGINEERINGCOUNCIL |
| 417/4/05513 | K0668 | LEONARDO MW LTD |
| 339399-003 | 56232 | LOCKHEED MARTIN CORPORATIONDBA LOCKHEED MARTIN |
| MIL-S-19500/439 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JANTX2N5308 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JANTX2N5038 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| 2910993 | 53711 | NAVAL SEA SYSTEMS COMMAND |
| 10133072 | A486G | NIMIKKEISTOKESKUS NCB FINLAND |
| 70943780002 | 08783 | RAYTHEON CO |
| 772330-1 | 96214 | RAYTHEON COMPANYDBA RAYTHEON |
| RYN121230/3 | S3092 | RHEINMETALL AIR DEFENCE AG |
Technical Data | NSN 5961-00-359-5752
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 150.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 90.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN |
| CURRENT RATING PER CHARACTERISTIC | AB5.00 AMPERES MAXIMUM AND AC20.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AG140.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD AND 1 CASE |
| OVERALL LENGTH | 1.573 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.380 INCHES MAXIMUM |
| OVERALL WIDTH | 1.050 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.). |
| SPECIFICATION/STANDARD DATA | 81349-MIL--19500 TO 439 GOVERNMENT SPECIFICATION |
