NSN 5961-00-365-6148
Part Details | TRANSISTOR
5961-00-365-6148 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 3867259P1, 386-7259P1, 3867259P1, 386-7259P1, 3867259P1, 386-7259P1, MHT7655, 5961-00-365-6148, 00-365-6148, 5961003656148, 003656148
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | FEB 27, 1974 | 00-365-6148 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-365-6148
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 386-7259P1 | 54X10 | RAYTHEON COMPANYDBA RAYTHEON |
| 386-7259P1 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| 386-7259P1 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
| MHT7655 | 21845 | SOLITRON DEVICES, INC. |
Technical Data | NSN 5961-00-365-6148
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 160.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 8.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN |
| CURRENT RATING PER CHARACTERISTIC | AC10.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AG65.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD AND 1 CASE |
| OVERALL LENGTH | 0.450 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.875 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
