NSN 5961-00-365-8832

Part Details | TRANSISTOR

5961-00-365-8832 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N4861A, 2N4861A, RELEASE5715, 2N4861A, 2N4861A, 8568051, 856805-1, 2N4861A, 5961-00-365-8832, 00-365-8832, 5961003658832, 003658832

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59FEB 27, 197400-365-883220588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-365-8832
Part Number Cage Code Manufacturer
2N4861A03864AAI/ACL TECHNOLOGIES INCIM AND C DIV
2N4861A80131ELECTRONIC INDUSTRIES ASSOCIATION
RELEASE571580131ELECTRONIC INDUSTRIES ASSOCIATION
2N4861A04713FREESCALE SEMICONDUCTOR, INC.
2N4861A32293INTERSIL INCSUB OF GENERAL ELECTRIC CO
856805-149956RAYTHEON COMPANYDBA RAYTHEON
2N4861A01295TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS
Technical Data | NSN 5961-00-365-8832
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION FIELD EFFECT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC30.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
CURRENT RATING PER CHARACTERISTICAC50.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAB360.0 MILLIWATTS MAXIMUM
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE GATE
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.210 INCHES MAXIMUM
OVERALL DIAMETER0.230 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIFICATION/STANDARD DATA80131-RELESE5715 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION