NSN 5961-00-400-0905
Part Details | TRANSISTOR
5961-00-400-0905 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 40666765, 40-666-765, PS101104, 4402458502, 44-024585-02, 2N4392, 5961-00-400-0905, 00-400-0905, 5961004000905, 004000905
Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
---|---|---|---|
59 | MAR 05, 1969 | 00-400-0905 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-400-0905
Part Number | Cage Code | Manufacturer |
---|---|---|
40-666-765 | K5294 | GE AVIATION SYSTEMS LTD |
PS101104 | U2248 | LEONARDO MW LTD |
44-024585-02 | 15280 | NORTHROP GRUMMAN SYSTEMS CORPORATIONDIV ES DEFENSIVE SYSTEMS DIVISION |
2N4392 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
Technical Data | NSN 5961-00-400-0905
Characteristic | Specifications |
---|---|
SEMICONDUCTOR MATERIAL | SILICON |
INTERNAL CONFIGURATION | FIELD EFFECT |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE |
CURRENT RATING PER CHARACTERISTIC | AK50.00 MILLIAMPERES MAXIMUM |
POWER RATING PER CHARACTERISTIC | AG1.8 WATTS MAXIMUM |
INCLOSURE MATERIAL | METAL |
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
MOUNTING METHOD | TERMINAL |
TERMINAL LENGTH | 0.500 INCHES MINIMUM |
TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
OVERALL LENGTH | 0.188 INCHES NOMINAL |
OVERALL DIAMETER | 0.220 INCHES NOMINAL |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |