NSN 5961-00-402-1649
Part Details | TRANSISTOR
5961-00-402-1649 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N41235, 2N4123-5, 930A7111, 930A711-1, 930A7111, 930A711-1, 5961-00-402-1649, 00-402-1649, 5961004021649, 004021649
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | APR 01, 1970 | 00-402-1649 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-402-1649
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N4123-5 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 930A711-1 | 99167 | HAMILTON SUNDSTRAND CORPORATION |
| 930A711-1 | 83843 | SUNDSTRAND CORPELECTRIC POWER SYSTEMS DIV |
Technical Data | NSN 5961-00-402-1649
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| CURRENT RATING PER CHARACTERISTIC | AC200.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AB350.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 165.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | PLASTIC |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.135 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.210 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.205 INCHES MAXIMUM |
| OVERALL WIDTH | 0.165 INCHES MAXIMUM |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
