NSN 5961-00-402-1656
Part Details | TRANSISTOR
5961-00-402-1656 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N5160A, 2N5160, 5961004021656, 70400431, 7040043-1, 2N5160, RELEASE5630, 2N5160, 8560620001, 85606200-01, 117563001, 117563-001, 18530440, 1853-0440, 2N5160, 18530440, 1853-0440, 63A133593P10, 2N5160A, 2N5160, JAN2N5160, 2N5160, P58005758013, P58-005758-013, 3520933013, 352-0933-013, 3520933010, 352-0933-010, 2N5160, 2N5160, 32027, 99069679, 91403348, SB802900, SB8029-00, P58005758013, P58-005758-013, 4901051600, 4901-05-1600, 5961-00-402-1656, 00-402-1656, 5961004021656, 004021656
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | APR 08, 1970 | 00-402-1656 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-402-1656
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N5160A | C7191 | ADELCO ELEKTRONIK GMBH |
| 2N5160 | C7191 | ADELCO ELEKTRONIK GMBH |
| 5961004021656 | A00AM | E.C.A ETABLISSEMENT CENTRALDESAPPROVISIONNEMENTS DES FORCES |
| 7040043-1 | 10236 | ELECTRODYNAMICS, INC.DBA L-3 COMMUNICATIONS |
| 2N5160 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE5630 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 2N5160 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 85606200-01 | 27963 | GENERAL DYNAMICS INFORMATION SYSTEMSINC. |
| 117563-001 | 91417 | HARRIS CORPORATIONDBA GOVERNMENT COMMUNICATIONS |
| 1853-0440 | 28480 | HEWLETT-PACKARD COMPANYDBA HP |
| 2N5160 | 07688 | JOINT ELECTRON DEVICE ENGINEERINGCOUNCIL |
| 1853-0440 | 1LQK8 | KEYSIGHT TECHNOLOGIES, INC. |
| 63A133593P10 | 16331 | LOCKHEED MARTIN CORPORATIONDBA LOCKHEED MARTIN |
| 2N5160A | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| 2N5160 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JAN2N5160 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| 2N5160 | 2D085 | NEW JERSEY SEMI-CONDUCTOR PRODUCTSINC |
| P58-005758-013 | 63103 | PULTZ JOHN M CO INC |
| 352-0933-013 | 13499 | ROCKWELL COLLINS, INC.DBA GOVERNMENT SYSTEMS |
| 352-0933-010 | 13499 | ROCKWELL COLLINS, INC.DBA GOVERNMENT SYSTEMS |
| 2N5160 | 50891 | SEMICONDUCTOR TECHNOLOGY INCDBA S T I |
| 2N5160 | 21845 | SOLITRON DEVICES, INC. |
| 32027 | 23386 | THALES DEFENSE & SECURITY, INC |
| 99069679 | F6481 | THALES SA |
| 91403348 | F6481 | THALES SA |
| SB8029-00 | 32760 | THOMSON INCDIV GRASS VALLEY |
| P58-005758-013 | 32791 | THOMSON MULTIMEDIA BROADCASTSOLUTIONS INC |
| 4901-05-1600 | 23338 | WAVETEK U S INCDIV OF WAVETEK CORP |
Technical Data | NSN 5961-00-402-1656
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC |
| CURRENT RATING PER CHARACTERISTIC | AC0.40 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AG5.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-39 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.260 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.370 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP |
| NONDEFINITIVE SPEC/STD DATA | 2N5160 TYPE |
| PRECIOUS MATERIAL | GOLD |
| PRECIOUS MATERIAL AND LOCATION | TERMINALS GOLD |
