NSN 5961-00-402-7730
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-402-7730 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: CA85, A4S374, A4S374, 50820132, 5082-0132, MS50176, MS50176, MS50176, 5961-00-402-7730, 00-402-7730, 5961004027730, 004027730
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAY 28, 1970 | 00-402-7730 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-402-7730
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| CA85 | 94375 | AUTOMATIC CONNECTOR |
| A4S374 | 21847 | FEI MICROWAVE INC |
| A4S374 | 14844 | FREQUENCY ELECTRONICS, INC. |
| 5082-0132 | 28480 | HEWLETT-PACKARD COMPANYDBA HP |
| MS50176 | 54X10 | RAYTHEON COMPANYDBA RAYTHEON |
| MS50176 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| MS50176 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-00-402-7730
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -35.0 MAXIMUM BREAKDOWN VOLTAGE, DC |
| CURRENT RATING PER CHARACTERISTIC | CH10.00 MICROAMPERES MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.064 INCHES MAXIMUM |
| TERMINAL TYPE AND QUANTITY | 2 FERRULE |
| OVERALL LENGTH | 0.212 INCHES NOMINAL |
| OVERALL DIAMETER | 0.122 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
