NSN 5961-00-402-8162

Part Details | TRANSISTOR

5961-00-402-8162 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 5800583942000116, 5800583-942000-116, 2N5262, 9321201, 932120-1, 2N5262, 2N5262, 2N5262, 5961-00-402-8162, 00-402-8162, 5961004028162, 004028162

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JAN 18, 197200-402-816220588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-402-8162
Part Number Cage Code Manufacturer
5800583-942000-116C0426HENSOLDT SENSORS GMBH
2N526234371INTERSIL CORPORATIONDIV NA
932120-106481NORTHROP GRUMMAN SYSTEMS CORPORATIONDIV NAVIGATION AND MARITIME SYSTEMS
2N526249956RAYTHEON COMPANYDBA RAYTHEON
2N52623B150RAYTHEON COMPANYDBA RAYTHEON
2N526201295TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS
Technical Data | NSN 5961-00-402-8162
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC75.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
CURRENT RATING PER CHARACTERISTICAC2.00 AMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAB800.0 MILLIWATTS MAXIMUM
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.200 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.175 INCHES MINIMUM AND 0.195 INCHES MAXIMUM
OVERALL DIAMETER0.334 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: NPN