NSN 5961-00-404-5562

Part Details | TRANSISTOR

5961-00-404-5562 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N3219, 2N3219, 2N3219, RELEASE4672A, 670540, 2N3219, 2N3219, 5961-00-404-5562, 00-404-5562, 5961004045562, 004045562

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59AUG 08, 196900-404-556220588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-404-5562
Part Number Cage Code Manufacturer
2N3219K0577BRITISH SAROZAL LTD
2N321912498CRYSTALONICS, INC.
2N321980131ELECTRONIC INDUSTRIES ASSOCIATION
RELEASE4672A80131ELECTRONIC INDUSTRIES ASSOCIATION
67054026512NORTHROP GRUMMAN SYSTEMS CORPORATIONDIV MISSION SYSTEMS
2N321921845SOLITRON DEVICES, INC.
2N321980183SPRAGUE PRODUCTS CO
Technical Data | NSN 5961-00-404-5562
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 35.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
CURRENT RATING PER CHARACTERISTICAC100.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAB400.0 MILLIWATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT200.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.085 INCHES MAXIMUM
OVERALL DIAMETER0.230 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA80131-RELESE4672 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION