NSN 5961-00-404-5599
Part Details | TRANSISTOR
5961-00-404-5599 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N4899A, 2N4899, 2N4899, RELEASE5443, 2N4899, 2N4899, 2N4899, 5800583942101102, 5800583-942101-102, 5L551210156, 5L5512-101-56, 007014100, 007-0141-00, 007001410000, 007-00141-0000, 5961PL1375448, 2846132011, 28461-32011, 2N4899, JAN2N4899, AL0836476, 2N4899, 5961-00-404-5599, 00-404-5599, 5961004045599, 004045599
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | AUG 08, 1969 | 00-404-5599 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-404-5599
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N4899A | C7191 | ADELCO ELEKTRONIK GMBH |
| 2N4899 | C7191 | ADELCO ELEKTRONIK GMBH |
| 2N4899 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE5443 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 2N4899 | 07263 | FAIRCHILD SEMICONDUCTOR CORP |
| 2N4899 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 2N4899 | 03877 | GILBERT ENGINEERING CO INC/INCONSUB OF TRANSITRON ELECTRONIC CORP |
| 5800583-942101-102 | C0426 | HENSOLDT SENSORS GMBH |
| 5L5512-101-56 | D1901 | HENSOLDT SENSORS GMBHDIV SEPS |
| 007-0141-00 | 22373 | HONEYWELL INTERNATIONAL INC.DBA HONEYWELL |
| 007-00141-0000 | 22373 | HONEYWELL INTERNATIONAL INC.DBA HONEYWELL |
| 5961PL1375448 | 9009H | INSPEKTORAT WSPARCIA SIL ZBROJNYCH |
| 28461-32011 | K0662 | LEONARDO MW LTD |
| 2N4899 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JAN2N4899 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| AL0836476 | D0894 | ROHDE & SCHWARZ GMBH & CO. KG |
| 2N4899 | 21845 | SOLITRON DEVICES, INC. |
Technical Data | NSN 5961-00-404-5599
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| CURRENT RATING PER CHARACTERISTIC | AB1.00 AMPERES MAXIMUM AND AC1.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AB25.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD AND 1 CASE |
| OVERALL LENGTH | 0.297 INCHES NOMINAL |
| OVERALL DIAMETER | 0.620 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP |
| SPECIFICATION/STANDARD DATA | 80131-RE.ESE5443 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |
