NSN 5961-00-407-2370

Part Details | TRANSISTOR

5961-00-407-2370 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: DMS 83053B, 185500251, 1855-0025-1, 18550025, 1855-0025, 185500251, 1855-0025-1, 18550025, 1855-0025, SU941, SFB3999, 5961-00-407-2370, 00-407-2370, 5961004072370, 004072370

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JAN 20, 197200-407-237020588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-407-2370
Part Number Cage Code Manufacturer
DMS 83053B16236DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL
1855-0025-128480HEWLETT-PACKARD COMPANYDBA HP
1855-002528480HEWLETT-PACKARD COMPANYDBA HP
1855-0025-11LQK8KEYSIGHT TECHNOLOGIES, INC.
1855-00251LQK8KEYSIGHT TECHNOLOGIES, INC.
SU94117856SILICONIX INCORPORATEDDIV SILICONIX
SFB399901295TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS
Technical Data | NSN 5961-00-407-2370
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION FIELD EFFECT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC6.0 MAXIMUM GATE TO SOURCE VOLTAGE
CURRENT RATING PER CHARACTERISTICBW10.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAG300.0 MILLIWATTS MAXIMUM
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE GATE
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.210 INCHES MAXIMUM
OVERALL DIAMETER0.230 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE