NSN 5961-00-408-8747
Part Details | TRANSISTOR
5961-00-408-8747 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: DMS 80064B, 511009, 511-009, 2N4353, 6191331, 619133-1, 5961-00-408-8747, 00-408-8747, 5961004088747, 004088747
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUL 15, 1970 | 00-408-8747 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-408-8747
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| DMS 80064B | 16236 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 511-009 | 14936 | GENERAL SEMICONDUCTOR INC |
| 2N4353 | 14936 | GENERAL SEMICONDUCTOR INC |
| 619133-1 | 37695 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-00-408-8747
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM FORWARD GATE TO SOURCE VOLTAGE AND 30.0 MAXIMUM DRAIN TO SOURCE VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | BT1.00 MILLIAMPERES MAXIMUM AND BS0.01 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF250.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | GLASS AND METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.210 INCHES NOMINAL |
| OVERALL DIAMETER | 0.230 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP |
