NSN 5961-00-409-3635
Part Details | TRANSISTOR
5961-00-409-3635 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 431729, 2N1990, 2N1990, 431729, 5961-00-409-3635, 00-409-3635, 5961004093635, 004093635
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUL 15, 1970 | 00-409-3635 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-409-3635
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 431729 | 1PQF4 | L3 TECHNOLOGIES, INC.DBA LINK SIMULATION & TRAINING |
| 2N1990 | 43611 | MICROSEMI CORP.- MASSACHUSETTSDBA MICROSEMI-LAWRENCE |
| 2N1990 | 12954 | MICROSEMI CORP.-SCOTTSDALEDBA MICROSEMI |
| 431729 | 36378 | RAYTHEON TECHNICAL SERVICES COMPANY |
Technical Data | NSN 5961-00-409-3635
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| INTERNAL JUNCTION CONFIGURATION | NPN |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.250 INCHES NOMINAL |
| OVERALL DIAMETER | 0.352 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
