NSN 5961-00-409-5495

Part Details | TRANSISTOR

5961-00-409-5495 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N4299, 6191343, 619134-3, 2N4299, 0804666, GPF29341, SES209, SES-209, 6191343, 619134-3, 2N4299, FTSX118, 108AJJ103, 5961-00-409-5495, 00-409-5495, 5961004095495, 004095495

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JUL 22, 197000-409-549520588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-409-5495
Part Number Cage Code Manufacturer
2N429908225INDUSTRO TRANSISTOR CORP
619134-337695RAYTHEON COMPANYDBA RAYTHEON
2N429954590RCA CORPDISTRIBUTION AND SPECIAL PRODUCTS
0804666D0894ROHDE & SCHWARZ GMBH & CO. KG
GPF29341D0894ROHDE & SCHWARZ GMBH & CO. KG
SES-20931338SEMITRONICS CORP
619134-331338SEMITRONICS CORP
2N429930043SOLID STATE DEVICES, INC.
FTSX11821845SOLITRON DEVICES, INC.
108AJJ10321845SOLITRON DEVICES, INC.
Technical Data | NSN 5961-00-409-5495
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC500.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 350.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 4.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
CURRENT RATING PER CHARACTERISTICAC1.00 AMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAB2.0 WATTS MAXIMUM
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR
MOUNTING METHOD UNTHREADED HOLE
MOUNTING FACILITY QUANTITY2
TERMINAL TYPE AND QUANTITY2 UNINSULATED WIRE LEAD AND 1 CASE
OVERALL LENGTH0.297 INCHES NOMINAL
OVERALL DIAMETER0.620 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: NPN