NSN 5961-00-409-5497

Part Details | TRANSISTOR

5961-00-409-5497 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N4220, 2N4220, 6191411, 619141-1, 2N4220, 2N4220, FN5270, 99995014, 9999-5014, 5961-00-409-5497, 00-409-5497, 5961004095497, 004095497

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JUL 22, 197000-409-549720588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-409-5497
Part Number Cage Code Manufacturer
2N422073445AMPEREX ELECTRONIC CORP
2N422004713FREESCALE SEMICONDUCTOR, INC.
619141-137695RAYTHEON COMPANYDBA RAYTHEON
2N422031338SEMITRONICS CORP
2N422017856SILICONIX INCORPORATEDDIV SILICONIX
FN527017856SILICONIX INCORPORATEDDIV SILICONIX
9999-501450227SOUTHERN CUTTING TOOL CO INC
Technical Data | NSN 5961-00-409-5497
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION FIELD EFFECT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC30.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
CURRENT RATING PER CHARACTERISTICAB10.00 MILLIAMPERES MAXIMUM AND AC15.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAB300.0 MILLIWATTS MAXIMUM
INCLOSURE MATERIAL METAL
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.210 INCHES MAXIMUM
OVERALL DIAMETER0.230 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE