NSN 5961-00-410-1115
Part Details | TRANSISTOR
5961-00-410-1115 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N1762, RELEASE3324, 2N1762, 5961-00-410-1115, 00-410-1115, 5961004101115, 004101115
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | AUG 18, 1969 | 00-410-1115 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-410-1115
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N1762 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE3324 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 2N1762 | 14433 | ITT SEMICONDUCTORS DIV |
Technical Data | NSN 5961-00-410-1115
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | GERMANIUM |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| INTERNAL JUNCTION CONFIGURATION | PNP |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 2.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC |
| CURRENT RATING PER CHARACTERISTIC | AC0.50 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AB28.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 95.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD AND 1 CASE |
| OVERALL LENGTH | 0.288 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.789 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIFICATION/STANDARD DATA | 80131-RELESE3324 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |
