NSN 5961-00-412-0950
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-412-0950 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 50820151, 5082-0151, HP50820151, HP5082-0151, 50820151, 5082-0151, HP50820151, HP5082-0151, CR0269, 5961-00-412-0950, 00-412-0950, 5961004120950, 004120950
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | APR 24, 1970 | 00-412-0950 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-412-0950
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 5082-0151 | 50434 | AVAGO TECHNOLOGIES U.S. INC.DBA AVAGO TECHNOLOGIES |
| HP5082-0151 | 50434 | AVAGO TECHNOLOGIES U.S. INC.DBA AVAGO TECHNOLOGIES |
| 5082-0151 | 28480 | HEWLETT-PACKARD COMPANYDBA HP |
| HP5082-0151 | 28480 | HEWLETT-PACKARD COMPANYDBA HP |
| CR0269 | 06811 | SYSTRON DONNER INERTIAL, INC.DBA SYSTRON DONNER INERTIAL |
Technical Data | NSN 5961-00-412-0950
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -15.0 MAXIMUM BREAKDOWN VOLTAGE, DC |
| CURRENT RATING PER CHARACTERISTIC | CH10.00 MICROAMPERES MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS CASE |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.150 INCHES MINIMUM |
| OVERALL DIAMETER | 0.068 INCHES MINIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
