NSN 5961-00-417-0240
Part Details | TRANSISTOR
5961-00-417-0240 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 1018717001, 1018717-001, DMS 88131B, SJ1310H, SJ1310, SJ1310H, 5961-00-417-0240, 00-417-0240, 5961004170240, 004170240
Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
---|---|---|---|
59 | NOV 20, 1970 | 00-417-0240 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-417-0240
Part Number | Cage Code | Manufacturer |
---|---|---|
1018717-001 | 05037 | ANACOMP, INC. |
DMS 88131B | 16236 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
SJ1310H | 04713 | FREESCALE SEMICONDUCTOR, INC. |
SJ1310 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
SJ1310H | 5V1P1 | ON SEMICONDUCTOR CORPORATION |
Technical Data | NSN 5961-00-417-0240
Characteristic | Specifications |
---|---|
SEMICONDUCTOR MATERIAL | SILICON |
INTERNAL CONFIGURATION | JUNCTION CONTACT |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 7.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
CURRENT RATING PER CHARACTERISTIC | AB4.00 AMPERES MAXIMUM AND AC10.00 AMPERES MAXIMUM |
POWER RATING PER CHARACTERISTIC | AF150.0 WATTS MAXIMUM |
INCLOSURE MATERIAL | METAL |
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
MOUNTING METHOD | UNTHREADED HOLE |
MOUNTING FACILITY QUANTITY | 2 |
TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD AND 1 CASE |
OVERALL LENGTH | 0.375 INCHES NOMINAL |
OVERALL DIAMETER | 0.875 INCHES MAXIMUM |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |
SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |