NSN 5961-00-417-7447
Part Details | TRANSISTOR
5961-00-417-7447 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: RS1532, DPT1890, SGC3027, SGB6440, 10183541, 5961-00-417-7447, 00-417-7447, 5961004177447, 004177447
Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
---|---|---|---|
59 | JUL 11, 1971 | 00-417-7447 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-417-7447
Part Number | Cage Code | Manufacturer |
---|---|---|
RS1532 | 07933 | FAIRCHILD SEMICONDUCTOR CORPSEMICONDUCTOR DIV HQ |
DPT1890 | 30043 | SOLID STATE DEVICES, INC. |
SGC3027 | 01295 | TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS |
SGB6440 | 01295 | TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS |
10183541 | 18876 | U S ARMY AVIATION AND MISSILECOMMAND |
Technical Data | NSN 5961-00-417-7447
Characteristic | Specifications |
---|---|
SEMICONDUCTOR MATERIAL | SILICON |
INTERNAL CONFIGURATION | JUNCTION CONTACT |
INTERNAL JUNCTION CONFIGURATION | NPN |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND -60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND -7.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
CURRENT RATING PER CHARACTERISTIC | AC0.50 AMPERES MAXIMUM |
POWER RATING PER CHARACTERISTIC | AB0.8 WATTS MAXIMUM |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
INCLOSURE MATERIAL | METAL |
MOUNTING METHOD | TERMINAL |
TERMINAL LENGTH | 0.500 INCHES MINIMUM |
TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
OVERALL LENGTH | 0.250 INCHES MAXIMUM |
OVERALL DIAMETER | 0.350 INCHES MAXIMUM |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |