NSN 5961-00-417-9652
Part Details | TRANSISTOR
5961-00-417-9652 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: DMS 81037B, A5T2222, 9720570001, 972057-0001, 440010, A5T2222, 5961-00-417-9652, 00-417-9652, 5961004179652, 004179652
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAY 04, 1974 | 00-417-9652 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-417-9652
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| DMS 81037B | 16236 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| A5T2222 | 07263 | FAIRCHILD SEMICONDUCTOR CORP |
| 972057-0001 | 96214 | RAYTHEON COMPANYDBA RAYTHEON |
| 440010 | 33642 | SYQWEST, INC. |
| A5T2222 | 01295 | TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS |
Technical Data | NSN 5961-00-417-9652
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN |
| CURRENT RATING PER CHARACTERISTIC | AC800.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AB625.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | PLASTIC |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES NOMINAL |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.190 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.190 INCHES MAXIMUM |
| OVERALL WIDTH | 0.205 INCHES MAXIMUM |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
