NSN 5961-00-419-2900
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-419-2900 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: TM67P6, 2321146P6, 232-1146P6, 2321146P6, 232-1146P6, 5961-00-419-2900, 00-419-2900, 5961004192900, 004192900
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | DEC 02, 1970 | 00-419-2900 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-419-2900
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| TM67P6 | 03877 | GILBERT ENGINEERING CO INC/INCONSUB OF TRANSITRON ELECTRONIC CORP |
| 232-1146P6 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| 232-1146P6 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-00-419-2900
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| CURRENT RATING PER CHARACTERISTIC | AJ15.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AH5.5 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | THREADED STUD |
| MOUNTING FACILITY QUANTITY | 1 |
| THREAD SERIES DESIGNATOR | UNF |
| NOMINAL THREAD SIZE | 0.190 INCHES |
| TERMINAL TYPE AND QUANTITY | 1 TAB, SOLDER LUG AND 1 THREADED STUD |
| OVERALL LENGTH | 1.188 INCHES NOMINAL |
| OVERALL WIDTH ACROSS FLATS | 0.438 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
