NSN 5961-00-419-6326
Part Details | THYRISTOR SEMICONDUCTOR DEVICE
5961-00-419-6326 A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: JAN2N682, JAN2N682, 5358331, 535833-1, 5961-00-419-6326, 00-419-6326, 5961004196326, 004196326
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | DEC 09, 1970 | 00-419-6326 | 33096 ( SEMICONDUCTOR DEVICE, THYRISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-419-6326
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| JAN2N682 | 66976 | DAKOTA MANUFACTURING CO., INC.DBA TRAIL-EZE |
| JAN2N682 | 18722 | HARRIS CORPSEMICONDUCTOR SECTOR |
| 535833-1 | 96214 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-00-419-6326
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| CURRENT RATING PER CHARACTERISTIC | CG16.00 AMPERES MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | THREADED STUD |
| MOUNTING FACILITY QUANTITY | 1 |
| THREAD SERIES DESIGNATOR | UNF |
| NOMINAL THREAD SIZE | 0.250 INCHES |
| TERMINAL TYPE AND QUANTITY | 1 THREADED STUD AND 2 TAB, SOLDER LUG |
| OVERALL LENGTH | 0.505 INCHES MAXIMUM |
| OVERALL WIDTH ACROSS FLATS | 0.562 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | INTERNAL JUNCTION CONFIGURATION ARRANGEMENT PNPN |
