NSN 5961-00-419-7556
Part Details | TRANSISTOR
5961-00-419-7556 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 195704700, 195704-700, 2N3767, SJ5245H, 63A133593P3, 5961-00-419-7556, 00-419-7556, 5961004197556, 004197556
Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
---|---|---|---|
59 | DEC 09, 1970 | 00-419-7556 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-419-7556
Part Number | Cage Code | Manufacturer |
---|---|---|
195704-700 | 81413 | BAE SYSTEMS INFORMATION ANDELECTRONIC SYSTEMS INTEGRATION I |
2N3767 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
SJ5245H | 04713 | FREESCALE SEMICONDUCTOR, INC. |
63A133593P3 | 16331 | LOCKHEED MARTIN CORPORATIONDBA LOCKHEED MARTIN |
Technical Data | NSN 5961-00-419-7556
Characteristic | Specifications |
---|---|
SEMICONDUCTOR MATERIAL | SILICON |
INTERNAL CONFIGURATION | JUNCTION CONTACT |
INTERNAL JUNCTION CONFIGURATION | NPN |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
CURRENT RATING PER CHARACTERISTIC | AC1.00 AMPERES MAXIMUM |
POWER RATING PER CHARACTERISTIC | AB20.0 WATTS MAXIMUM |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
INCLOSURE MATERIAL | METAL |
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
MOUNTING METHOD | UNTHREADED HOLE |
MOUNTING FACILITY QUANTITY | 2 |
TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD AND 1 CASE |
OVERALL LENGTH | 0.297 INCHES NOMINAL |
OVERALL DIAMETER | 0.620 INCHES MAXIMUM |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |