NSN 5961-00-419-9650
Part Details | TRANSISTOR
5961-00-419-9650 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: DMS 87023B, 2N5358, RELEASE5780, 2N5358, 2N5358, 2N5358, 5961-00-419-9650, 00-419-9650, 5961004199650, 004199650
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | FEB 04, 1972 | 00-419-9650 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-419-9650
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| DMS 87023B | 16236 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 2N5358 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE5780 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 2N5358 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 2N5358 | 5V1P1 | ON SEMICONDUCTOR CORPORATION |
| 2N5358 | 01295 | TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS |
Technical Data | NSN 5961-00-419-9650
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 40.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE |
| POWER RATING PER CHARACTERISTIC | AB300.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.210 INCHES NOMINAL |
| OVERALL DIAMETER | 0.230 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIFICATION/STANDARD DATA | 80131-RELESE5780 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |
