NSN 5961-00-421-3025
Part Details | TRANSISTOR
5961-00-421-3025 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: DMS 81037B, TIS69, 5961-00-421-3025, 00-421-3025, 5961004213025, 004213025
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | DEC 07, 1970 | 00-421-3025 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-421-3025
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| DMS 81037B | 16236 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| TIS69 | 01295 | TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS |
Technical Data | NSN 5961-00-421-3025
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 15.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE |
| CURRENT RATING PER CHARACTERISTIC | AK30.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AG360.0 MILLIWATTS MAXIMUM |
| INCLOSURE MATERIAL | PLASTIC |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.125 INCHES MINIMUM AND 0.165 INCHES MAXIMUM |
| OVERALL WIDTH | 0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM |
