NSN 5961-00-421-3040

Part Details | TRANSISTOR

5961-00-421-3040 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: JANTX2N4856A, JANTX2N4856, 6854W19P002, 200734007, 200734-007, EHH1060, SFE1020530, SFE1020-530, 18550378, 1855-0378, 2N4856, JANTX2N4856, 18550378, 1855-0378, 560717, MILPRF19500385, MIL-PRF-19500/385, JAN2N4856, JAN2N4091, JANTX2N4856, SF12452, 2654518, 10133078, 72309610, 723096-10, 4188927, 418892-7, FN2863, 2N4091, SN2418, 2N4091, 2N4091, 5961-00-421-3040, 00-421-3040, 5961004213040, 004213040

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59DEC 14, 197000-421-304020588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-421-3040
Part Number Cage Code Manufacturer
JANTX2N4856AC7191ADELCO ELEKTRONIK GMBH
JANTX2N4856C7191ADELCO ELEKTRONIK GMBH
6854W19P00297424AMETEK INC.DBA AMETEK AEROSPACE & DEFENSE
200734-00781413BAE SYSTEMS INFORMATION ANDELECTRONIC SYSTEMS INTEGRATION I
EHH106016236DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL
SFE1020-53004713FREESCALE SEMICONDUCTOR, INC.
1855-037828480HEWLETT-PACKARD COMPANYDBA HP
2N485681350JOINT ARMY-NAVY SPECIFICATIONSPROMULGATED BY MILITARY DEPARTMENTS
JANTX2N485681350JOINT ARMY-NAVY SPECIFICATIONSPROMULGATED BY MILITARY DEPARTMENTS
1855-03781LQK8KEYSIGHT TECHNOLOGIES, INC.
56071756232LOCKHEED MARTIN CORPORATIONDBA LOCKHEED MARTIN
MIL-PRF-19500/38581349MILITARY SPECIFICATIONSPROMULGATED BY MILITARY
JAN2N485681349MILITARY SPECIFICATIONSPROMULGATED BY MILITARY
JAN2N409181349MILITARY SPECIFICATIONSPROMULGATED BY MILITARY
JANTX2N485681349MILITARY SPECIFICATIONSPROMULGATED BY MILITARY
SF1245227014NATIONAL SEMICONDUCTOR CORPORATION
265451810001NAVAIR AND NAVSEA MANAGEDORIGINAL DESIGN ACTIVITY DWG NOT
10133078A486GNIMIKKEISTOKESKUS NCB FINLAND
723096-1005869RAYTHEON COMPANYDBA RAYTHEON
418892-796214RAYTHEON COMPANYDBA RAYTHEON
FN286317856SILICONIX INCORPORATEDDIV SILICONIX
2N409117856SILICONIX INCORPORATEDDIV SILICONIX
SN241817856SILICONIX INCORPORATEDDIV SILICONIX
2N409121845SOLITRON DEVICES, INC.
2N409115818TELCOM SEMICONDUCTOR INC
Technical Data | NSN 5961-00-421-3040
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION FIELD EFFECT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC40.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 40.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -40.0 MAXIMUM GATE TO SOURCE VOLTAGE
CURRENT RATING PER CHARACTERISTICAK50.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAF1.8 WATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT200.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE GATE
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
OVERALL DIAMETER0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
SPECIAL FEATURESWEAPON SYSTEM ESSENTIAL
TEST DATA DOCUMENT81349-MIL-PRF-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.).
SPECIFICATION/STANDARD DATA81349-MIL-PRF-19500 TO 385 GOVERNMENT SPECIFICATION
CRITICALITY CODE JUSTIFICATIONFEAT
END ITEM IDENTIFICATIONAIRCRAFT, ( AC-130H, MC-130H, EC-130E, HC-130 ); SUPPORT EQUIPMENT,