NSN 5961-00-422-3719
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-422-3719 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 411497076, 41149-707-6, 41149707006, 41149-707-00-6, 4791500009, 479-1500-009, 411497076, 41149-707-6, 41149707006, 41149-707-00-6, 1N5355B, RELEASE 5750, 1N5355B, 1N5355B, 1N5355B, 1N5355B, 1N5355B, 1N5355B, 1N5355B, 1N5355B, 1N5355B, 1N5355B, 5961-00-422-3719, 00-422-3719, 5961004223719, 004223719
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUL 30, 1970 | 00-422-3719 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-422-3719
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 41149-707-6 | KC1M9 | BAE SYSTEMS MARITIME SERVICESLIMITED |
| 41149-707-00-6 | KC1M9 | BAE SYSTEMS MARITIME SERVICESLIMITED |
| 479-1500-009 | 94756 | BOEING COMPANY, THEDBA BOEING |
| 41149-707-6 | K4556 | BRITISH AEROSPACE DEFENCE SYSTEMSLTD T/A BAE SYSTEMS |
| 41149-707-00-6 | K4556 | BRITISH AEROSPACE DEFENCE SYSTEMSLTD T/A BAE SYSTEMS |
| 1N5355B | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE 5750 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 1N5355B | U4485 | FREESCALE SEMICONDUCTOR UK LTD |
| 1N5355B | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 1N5355B | 24444 | GENERAL SEMICONDUCTOR INDUSTRIES INC |
| 1N5355B | 81483 | INFINEON TECHNOLOGIES AMERICAS CORP.DBA I R |
| 1N5355B | 16068 | INTERNATIONAL DIODE CORP |
| 1N5355B | 1MY79 | INTERSIL COMMUNICATIONS INC. |
| 1N5355B | 34371 | INTERSIL CORPORATIONDIV NA |
| 1N5355B | 12969 | MICRO USPD INC |
| 1N5355B | 99942 | N A P SMD TECHNOLOGY INC |
| 1N5355B | 82227 | VDO CONTROL SYSTEMS INC |
Technical Data | NSN 5961-00-422-3719
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 18.0 NOMINAL NOMINAL REGULATOR VOLTAGE |
| VOLTAGE TOLERANCE IN PERCENT | M5.0/P5.0 |
| CURRENT RATING PER CHARACTERISTIC | AS65.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | AG5.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.350 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.145 INCHES MAXIMUM |
| FUNCTION FOR WHICH DESIGNED | ZENER DIODE |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIFICATION/STANDARD DATA | 80131-RELESE 5750 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |
