NSN 5961-00-422-3788

Part Details | TRANSISTOR

5961-00-422-3788 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N5434, 2N5434, RELEASE5800, 2N5434, 2N5434, 5961-00-422-3788, 00-422-3788, 5961004223788, 004223788

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JUL 30, 197000-422-378820588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-422-3788
Part Number Cage Code Manufacturer
2N543412498CRYSTALONICS, INC.
2N543480131ELECTRONIC INDUSTRIES ASSOCIATION
RELEASE580080131ELECTRONIC INDUSTRIES ASSOCIATION
2N543427014NATIONAL SEMICONDUCTOR CORPORATION
2N543417856SILICONIX INCORPORATEDDIV SILICONIX
Technical Data | NSN 5961-00-422-3788
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION FIELD EFFECT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC25.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
CURRENT RATING PER CHARACTERISTICAD400.00 MILLIAMPERES MAXIMUM AND AK100.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAB300.0 MILLIWATTS MAXIMUM
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE GATE
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.132 INCHES NOMINAL
OVERALL DIAMETER0.219 INCHES NOMINAL
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIFICATION/STANDARD DATA80131-RELESE5800 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION