NSN 5961-00-425-6311
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-425-6311 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N5221B, 1N5221B, 1N5221B, 101185, 101-185, 1N5221B, 1N5221, RELEASE5566, 1N5221A, 1N5221B, 1N5221A, 1N5221B, 1N5221, 1N5221B, 1N5221B, 1N5221B, 1N5221B, 1N5221B, 5881011, 588101-1, CR1121, CR112-1, 1N5221B, 1N5221B, 5961-00-425-6311, 00-425-6311, 5961004256311, 004256311
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | FEB 09, 1972 | 00-425-6311 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-425-6311
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1N5221B | 81352 | AIR FORCE-NAVY AERONAUTICALSPECIFICATIONS |
| 1N5221B | 27622 | BURNS AND TOWNE INC |
| 1N5221B | 16352 | C O D I CORPDBA CODI SEMICONDUCTOR INC |
| 101-185 | 34984 | DATA GENERAL CORPM/S 9S17 |
| 1N5221B | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 1N5221 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE5566 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 1N5221A | 07263 | FAIRCHILD SEMICONDUCTOR CORP |
| 1N5221B | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 1N5221A | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 1N5221B | 24444 | GENERAL SEMICONDUCTOR INDUSTRIES INC |
| 1N5221 | 37676 | ILLINOIS TOOL WORKS INC.DBA MAGNAFLUX |
| 1N5221B | 81483 | INFINEON TECHNOLOGIES AMERICAS CORP.DBA I R |
| 1N5221B | 16068 | INTERNATIONAL DIODE CORP |
| 1N5221B | 12954 | MICROSEMI CORP.-SCOTTSDALEDBA MICROSEMI |
| 1N5221B | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| 1N5221B | 5V1P1 | ON SEMICONDUCTOR CORPORATION |
| 588101-1 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| CR112-1 | 36378 | RAYTHEON TECHNICAL SERVICES COMPANY |
| 1N5221B | 31338 | SEMITRONICS CORP |
| 1N5221B | 15818 | TELCOM SEMICONDUCTOR INC |
Technical Data | NSN 5961-00-425-6311
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 2.4 NOMINAL NOMINAL REGULATOR VOLTAGE |
| VOLTAGE TOLERANCE IN PERCENT | M5.0/P5.0 |
| CURRENT RATING PER CHARACTERISTIC | AS20.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | AG500.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | GLASS |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-204AH |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.250 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.160 INCHES NOMINAL |
| OVERALL DIAMETER | 0.075 INCHES NOMINAL |
| FUNCTION FOR WHICH DESIGNED | ZENER DIODE |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIFICATION/STANDARD DATA | 80131-RELESE5566 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |
