NSN 5961-00-433-5729

Part Details | TRANSISTOR

5961-00-433-5729 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 5338371, 533837-1, 5327831, 532783-1, 2N3999, 2N3999, 5961-00-433-5729, 00-433-5729, 5961004335729, 004335729

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59AUG 07, 197000-433-572920588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-433-5729
Part Number Cage Code Manufacturer
533837-196214RAYTHEON COMPANYDBA RAYTHEON
532783-196214RAYTHEON COMPANYDBA RAYTHEON
2N399996214RAYTHEON COMPANYDBA RAYTHEON
2N399901295TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS
Technical Data | NSN 5961-00-433-5729
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION NPN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 8.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
CURRENT RATING PER CHARACTERISTICAC5.00 AMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAB2.0 WATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT200.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR
MOUNTING METHOD THREADED STUD
MOUNTING FACILITY QUANTITY1
THREAD SERIES DESIGNATOR UNF
NOMINAL THREAD SIZE0.190 INCHES
TERMINAL TYPE AND QUANTITY3 TAB, SOLDER LUG
OVERALL LENGTH0.394 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS0.437 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE