NSN 5961-00-434-9211

Part Details | TRANSISTOR

5961-00-434-9211 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N5011, RELEASE5461, 2N5011, 2N5011, 485067, 485-067, 2N5011, 5961-00-434-9211, 00-434-9211, 5961004349211, 004349211

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59AUG 17, 197000-434-921120588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-434-9211
Part Number Cage Code Manufacturer
2N501180131ELECTRONIC INDUSTRIES ASSOCIATION
RELEASE546180131ELECTRONIC INDUSTRIES ASSOCIATION
2N501107688JOINT ELECTRON DEVICE ENGINEERINGCOUNCIL
2N501181349MILITARY SPECIFICATIONSPROMULGATED BY MILITARY
485-06799592RAYTHEON COMPANYDBA RAYTHEON
2N501107256SILICON TRANSISTOR CORPSUB OF BBF INC
Technical Data | NSN 5961-00-434-9211
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC600.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 600.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
CURRENT RATING PER CHARACTERISTICAB250.00 MILLIAMPERES MAXIMUM AND AC500.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAB2.0 WATTS MAXIMUM
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR
MOUNTING METHOD TERMINAL
TERMINAL LENGTH1.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.200 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.260 INCHES MAXIMUM
OVERALL DIAMETER0.370 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA80131-RELESE5461 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION