NSN 5961-00-436-8953
Part Details | TRANSISTOR
5961-00-436-8953 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 3040004000, JAN2N4919A, JAN2N4919, 28435870M, 28435-870M, 12200010, 12-200010, 66300106, 663-00106, 2N4919, RELEASE5441, 2N4919, MJE711, 18530222, 1853-0222, 345224009, 345-224-009, 007002900, JAN2N4919, 0445370009, 50221001, 062053, 062-053, 5961-00-436-8953, 00-436-8953, 5961004368953, 004368953
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | SEP 03, 1969 | 00-436-8953 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-436-8953
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 3040004000 | 33372 | AAR BROOKS AND PERKINS CORPAERONETICS DIV |
| JAN2N4919A | C7191 | ADELCO ELEKTRONIK GMBH |
| JAN2N4919 | C7191 | ADELCO ELEKTRONIK GMBH |
| 28435-870M | 51190 | AEROFLEX WICHITA, INC.DBA IFR SYSTEMS |
| 12-200010 | 74861 | CHARLES INDUSTRIES, LTD.DIV TELECOM/MARINE AND INDUSTRIAL |
| 663-00106 | 13488 | DATRON THE INSTRUMENTS INC |
| 2N4919 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE5441 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 2N4919 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| MJE711 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 1853-0222 | 28480 | HEWLETT-PACKARD COMPANYDBA HP |
| 345-224-009 | 07421 | INTERSTATE ELECTRONICS CORPORATIONDBA L-3 INTERSTATE ELECTRONICS |
| 007002900 | 53102 | KUSTOM ELECTRONICS INC |
| JAN2N4919 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| 0445370009 | 12338 | RIIMIC, LLCDBA SUNAIR ELECTRONICS |
| 50221001 | 59661 | SYNTEGRA / USA/ INCCOMPUTER PARTS AND SUPPLIES |
| 062-053 | 23042 | TRILITHIC, INC. |
Technical Data | NSN 5961-00-436-8953
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| CURRENT RATING PER CHARACTERISTIC | AC1.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AB30.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 1 |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.450 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.330 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP |
| SPECIFICATION/STANDARD DATA | 80131-RELESE5441 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |
