NSN 5961-00-439-3749
Part Details | TRANSISTOR
5961-00-439-3749 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: JAN2N3739A, 200895001, 200895-001, 330100, 40422, 4805178525, 4805-178525, 2086176, 20861-76, 5961PL1375570, 07765000, 0776-5000, 3396281, 339628-1, 2N3739, MILS19500402, MIL-S-19500/402, MILPRF19500402, MIL-PRF-19500/402, JAN2N3749, JAN2N3739, 5383261, 538326-1, 40264, 50A0019, 5961-00-439-3749, 00-439-3749, 5961004393749, 004393749
Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
---|---|---|---|
59 | DEC 05, 1969 | 00-439-3749 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-439-3749
Part Number | Cage Code | Manufacturer |
---|---|---|
JAN2N3739A | C7191 | ADELCO ELEKTRONIK GMBH |
200895-001 | 81413 | BAE SYSTEMS INFORMATION ANDELECTRONIC SYSTEMS INTEGRATION I |
330100 | 16067 | CALIFORNIA INSTRUMENTS CORP |
40422 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
4805-178525 | 89536 | FLUKE CORPORATION |
20861-76 | 28569 | HICKOK INCORPORATED |
5961PL1375570 | 9009H | INSPEKTORAT WSPARCIA SIL ZBROJNYCH |
0776-5000 | 82386 | JAIDINGER MFG. CO., INC.DBA JAICO PRODUCTS |
339628-1 | 56232 | LOCKHEED MARTIN CORPORATIONDBA LOCKHEED MARTIN |
2N3739 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
MIL-S-19500/402 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
MIL-PRF-19500/402 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
JAN2N3749 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
JAN2N3739 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
538326-1 | 96214 | RAYTHEON COMPANYDBA RAYTHEON |
40264 | 54590 | RCA CORPDISTRIBUTION AND SPECIAL PRODUCTS |
50A0019 | 52025 | SIEMENS ENERGY & AUTOMATION, INC.DIV SIEMENS ENERGY & AUTOMATION DBA |
Technical Data | NSN 5961-00-439-3749
Characteristic | Specifications |
---|---|
SEMICONDUCTOR MATERIAL | SILICON |
INTERNAL CONFIGURATION | JUNCTION CONTACT |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 325.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 300.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN |
CURRENT RATING PER CHARACTERISTIC | AB0.50 AMPERES MAXIMUM AND AC1.00 AMPERES MAXIMUM |
POWER RATING PER CHARACTERISTIC | AF20.0 WATTS MAXIMUM |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
INCLOSURE MATERIAL | METAL |
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
MOUNTING METHOD | UNTHREADED HOLE |
MOUNTING FACILITY QUANTITY | 2 |
TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD AND 1 CASE |
OVERALL LENGTH | 1.252 INCHES MAXIMUM |
OVERALL HEIGHT | 0.340 INCHES MAXIMUM |
OVERALL WIDTH | 0.700 INCHES MAXIMUM |
SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
TEST DATA DOCUMENT | 81349-MIL-PRF-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.). |
SPECIFICATION/STANDARD DATA | 81349-MIL--19500 TO 402 GOVERNMENT SPECIFICATION |