NSN 5961-00-442-5556
Part Details | THYRISTOR SEMICONDUCTOR DEVICE
5961-00-442-5556 A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N3899, 2N3899A, 2N3899, RELEASE5169, 1267911501, 12-679115-01, 2N3899, S7412M, 18440058, 1844-0058, 2N3899, SK3581, SK3505, 8240500, 3267150, 2N3899, 8015081, 801508-1, 2N3899, 2N3899, 5961-00-442-5556, 00-442-5556, 5961004425556, 004425556
Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
---|---|---|---|
59 | FEB 18, 1972 | 00-442-5556 | 33096 ( SEMICONDUCTOR DEVICE, THYRISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-442-5556
Part Number | Cage Code | Manufacturer |
---|---|---|
2N3899 | D2041 | ABB AUTOMATION SYSTEMS GMBH |
2N3899A | C7191 | ADELCO ELEKTRONIK GMBH |
2N3899 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
RELEASE5169 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
12-679115-01 | 52414 | EMERSON ELECTRIC COCOMPUTER POWER DIV |
2N3899 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
S7412M | 04713 | FREESCALE SEMICONDUCTOR, INC. |
1844-0058 | 28480 | HEWLETT-PACKARD COMPANYDBA HP |
2N3899 | 34371 | INTERSIL CORPORATIONDIV NA |
SK3581 | 34371 | INTERSIL CORPORATIONDIV NA |
SK3505 | 34371 | INTERSIL CORPORATIONDIV NA |
8240500 | 53711 | NAVAL SEA SYSTEMS COMMAND |
3267150 | 53711 | NAVAL SEA SYSTEMS COMMAND |
2N3899 | 66844 | POWEREX, INC |
801508-1 | 96214 | RAYTHEON COMPANYDBA RAYTHEON |
2N3899 | 96214 | RAYTHEON COMPANYDBA RAYTHEON |
2N3899 | 31338 | SEMITRONICS CORP |
Technical Data | NSN 5961-00-442-5556
Characteristic | Specifications |
---|---|
SEMICONDUCTOR MATERIAL | SILICON |
INTERNAL CONFIGURATION | JUNCTION CONTACT |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 700.0 MAXIMUM FORWARD VOLTAGE, PEAK |
CURRENT RATING PER CHARACTERISTIC | CG22.00 AMPERES MAXIMUM AND BS2.00 AMPERES MAXIMUM |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 100.0 DEG CELSIUS CASE |
INCLOSURE MATERIAL | METAL |
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | ANODE |
MOUNTING METHOD | THREADED STUD |
MOUNTING FACILITY QUANTITY | 1 |
THREAD SERIES DESIGNATOR | UNF |
NOMINAL THREAD SIZE | 0.250 INCHES |
TERMINAL TYPE AND QUANTITY | 2 TAB, SOLDER LUG AND 1 THREADED STUD |
OVERALL LENGTH | 1.402 INCHES MAXIMUM |
OVERALL WIDTH ACROSS FLATS | 0.557 INCHES NOMINAL |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |
SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNPN |
SPECIFICATION/STANDARD DATA | 80131-RELESE5169 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |