NSN 5961-00-451-7408

Part Details | DIODE SEMICONDUCTOR DEVICE

5961-00-451-7408 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.

Alternate Parts: JAN1N5617A, 94104020602, 941-0402-0602, 4791295002, 479-1295-002, 1N5617, Q62702A494Z, Q62702-A494-Z, Q62702A494Z, Q62702-A494-Z, 5M.5532.223.24, 94104020602, 941-0402-0602, MILS19500429, MIL-S-19500/429, MILPRF19500429, MIL-PRF-19500/429, JAN1N5617, 317421A, 5873796, 587379-6, 0439.6161.00, 4396161, 439.6161, AD4396161, 1N5617, 1N5617, 352250012173, 99114665, 1N5617, 5961-00-451-7408, 00-451-7408, 5961004517408, 004517408

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59MAY 27, 197100-451-740820589 ( SEMICONDUCTOR DEVICE, DIODE )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-451-7408
Part Number Cage Code Manufacturer
JAN1N5617AC7191ADELCO ELEKTRONIK GMBH
941-0402-0602A0307ALENIA SISTEMI DIFESA SPA
479-1295-00294756BOEING COMPANY, THEDBA BOEING
1N5617F8385E2V SEMICONDUCTORSDBA E2V SEMICONDUCTORS
Q62702-A494-ZC4751EPCOS AG
Q62702-A494-ZD1180EPCOS AG ABT. PR ROE K PM
5M.5532.223.24D1901HENSOLDT SENSORS GMBHDIV SEPS
941-0402-0602A0810LEONARDO S.P.A. - AIRBORNE & SPACESYSTEM DIVISION
MIL-S-19500/42981349MILITARY SPECIFICATIONSPROMULGATED BY MILITARY
MIL-PRF-19500/42981349MILITARY SPECIFICATIONSPROMULGATED BY MILITARY
JAN1N561781349MILITARY SPECIFICATIONSPROMULGATED BY MILITARY
317421AKA042QES LTD QUALITY ELECTRONICSERVICES
587379-649956RAYTHEON COMPANYDBA RAYTHEON
0439.6161.00FA056ROHDE & SCHWARZ FRANCE SAS
4396161D0894ROHDE & SCHWARZ GMBH & CO. KG
439.6161D0894ROHDE & SCHWARZ GMBH & CO. KG
AD4396161D0894ROHDE & SCHWARZ GMBH & CO. KG
1N561714099SEMTECH CORPORATION
1N5617D2416THALES DEFENCE & SECURITYSYSTEMSGMBH
352250012173H0203THALES NEDERLANDDBA THALES LAND & JOINT SYSTEMS
99114665F6481THALES SA
1N5617F4022VISHAY GENERAL SEMICONDUCTOR SAS
Technical Data | NSN 5961-00-451-7408
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC400.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
CURRENT RATING PER CHARACTERISTICCF25.00 AMPERES MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT175.0 DEG CELSIUS AMBIENT AIR
INCLOSURE MATERIAL GLASS
MOUNTING METHOD TERMINAL
TERMINAL LENGTH1.000 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY2 UNINSULATED WIRE LEAD
OVERALL LENGTH0.130 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
OVERALL DIAMETER0.065 INCHES MINIMUM AND 0.110 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
TEST DATA DOCUMENT81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.).
SPECIFICATION/STANDARD DATA81349-MIL--19500 TO 429 GOVERNMENT SPECIFICATION