NSN 5961-00-454-6864

Part Details | TRANSISTOR

5961-00-454-6864 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N4448, 2N4448, RELEASE5516, U243, FN1782, 2N444B, U243, 5961-00-454-6864, 00-454-6864, 5961004546864, 004546864

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59APR 18, 196900-454-686420588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-454-6864
Part Number Cage Code Manufacturer
2N444812498CRYSTALONICS, INC.
2N444880131ELECTRONIC INDUSTRIES ASSOCIATION
RELEASE551680131ELECTRONIC INDUSTRIES ASSOCIATION
U24317856SILICONIX INCORPORATEDDIV SILICONIX
FN178217856SILICONIX INCORPORATEDDIV SILICONIX
2N444B21845SOLITRON DEVICES, INC.
U24315818TELCOM SEMICONDUCTOR INC
Technical Data | NSN 5961-00-454-6864
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION FIELD EFFECT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC20.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
CURRENT RATING PER CHARACTERISTICAB100.00 MILLIAMPERES MAXIMUM AND AC400.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAB400.0 MILLIWATTS MAXIMUM
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE GATE
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.085 INCHES MAXIMUM
OVERALL DIAMETER0.230 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIFICATION/STANDARD DATA80131-RELESE5516 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION