NSN 5961-00-458-2210
Part Details | TRANSISTOR
5961-00-458-2210 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 26028121, 2602812-1, 26028121, 2602812-1, 2602812001, 2602812-001, T1316, 0120181, 012018-1, 5961-00-458-2210, 00-458-2210, 5961004582210, 004582210
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUN 03, 1974 | 00-458-2210 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-458-2210
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2602812-1 | 14936 | GENERAL SEMICONDUCTOR INC |
| 2602812-1 | 17981 | SCI SYSTEMS INC |
| 2602812-001 | 2J622 | SCI TECHNOLOGY, INC. |
| T1316 | 31471 | SEMICONDUCTOR COMPONENTS INDUSTRIES,LLC |
| 012018-1 | 01295 | TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS |
Technical Data | NSN 5961-00-458-2210
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 30.0 MAXIMUM GATE TO SOURCE VOLTAGE AND 30.0 MAXIMUM DRAIN TO GATE VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | AK50.00 MILLIAMPERES MAXIMUM AND AD0.10 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AG650.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.210 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.230 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
