NSN 5961-00-459-5700
Part Details | UNITIZED SEMICONDUCTOR DEVICE RECTIFIER
5961-00-459-5700 Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see INTEGRATED CIRCUIT (as modified). Excludes SEMICONDUCTOR DEVICES, UNITIZED; SEMICONDUCTOR DEVICE ASSEMBLY; and RECTIFIER NETWORK, UNITIZED.
Alternate Parts: SCAJIM, SCAJ1F, SCAJ1F, 5961-00-459-5700, 00-459-5700, 5961004595700, 004595700
Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
---|---|---|---|
59 | DEC 26, 1969 | 00-459-5700 | 62108 ( RECTIFIER, SEMICONDUCTOR DEVICE, UNITIZED ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-459-5700
Part Number | Cage Code | Manufacturer |
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SCAJIM | 12954 | MICROSEMI CORP.-SCOTTSDALEDBA MICROSEMI |
SCAJ1F | 14099 | SEMTECH CORPORATION |
SCAJ1F | SH879 | SEMTECH CORPUS CHRISTI.A. DE C.V.REYNOSA FACILITY |
Technical Data | NSN 5961-00-459-5700
Characteristic | Specifications |
---|---|
SPECIAL FEATURES | SILICON FAST RECOVERY BRIDGE RECTIFIER,100 PEAK INVERSE VOLTAGE,ALUMINUM CASE,0.750 IN. LG;0.750 IN. W;0.250 IN. MAX H;FOUR TURRET TERMINALS SPACED ON 0.400 IN. BY 0.400 IN. CENTERS;ONE 0.147 IN. DIA MTG HOLE COUNTERBORED 0.235 IN. DIA BY 0.150 IN. DEEP;MTG HOLE CENTRALLY LOCATED THROUGH TOP TO BOTTOM OF CASE |