NSN 5961-00-460-5007
Part Details | TRANSISTOR
5961-00-460-5007 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N4427A, 2N4427, 2N4427, 310011, 1533030001, 153-3030-001, 2N4427, RELEASE5400, 2N4427, 2N4427, T00002N4427Y0, 2N4427, 2N4427, 2N4427, 2N4427, 2N4427, 2N4427, 2N4427, 553504, 2N4427, 48R869631, 48R869591, M9591, 5961-00-460-5007, 00-460-5007, 5961004605007, 004605007
Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
---|---|---|---|
59 | JAN 14, 1970 | 00-460-5007 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-460-5007
Part Number | Cage Code | Manufacturer |
---|---|---|
2N4427A | C7191 | ADELCO ELEKTRONIK GMBH |
2N4427 | C7191 | ADELCO ELEKTRONIK GMBH |
2N4427 | 73445 | AMPEREX ELECTRONIC CORP |
310011 | 66943 | DATRON WORLD COMMUNICATIONS INC. |
153-3030-001 | 88869 | EATON CORPELECTRONIC INSTRUMENTATION DIV |
2N4427 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
RELEASE5400 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
2N4427 | 34156 | FALKOR PARTNERS, LLCDBA SEMICOA |
2N4427 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
T00002N4427Y0 | 0177B | INDRA SISTEMAS SADBA TECNOLOGIA INFORMATICA AVANZADA, |
2N4427 | 34371 | INTERSIL CORPORATIONDIV NA |
2N4427 | 33178 | MICROSEMI PPC INC |
2N4427 | F1721 | RADIOTECHNIQUE-COPRIM 'R.T.C.'LASA DIV 'RADIOTECHNIQUE' |
2N4427 | 26720 | RCA CORPNEW PRODUCTS DIV |
2N4427 | 50891 | SEMICONDUCTOR TECHNOLOGY INCDBA S T I |
2N4427 | 31338 | SEMITRONICS CORP |
2N4427 | 21845 | SOLITRON DEVICES, INC. |
553504 | F0057 | THALES COMMUNICATIONS & SECURITYS.A.S |
2N4427 | 34428 | UNITED PAGE INC |
48R869631 | H1199 | VENTELO |
48R869591 | H1199 | VENTELO |
M9591 | H1199 | VENTELO |
Technical Data | NSN 5961-00-460-5007
Characteristic | Specifications |
---|---|
SEMICONDUCTOR MATERIAL | SILICON |
INTERNAL CONFIGURATION | JUNCTION CONTACT |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 2.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
CURRENT RATING PER CHARACTERISTIC | AC400.00 MILLIAMPERES MAXIMUM |
POWER RATING PER CHARACTERISTIC | AB2.0 WATTS MAXIMUM |
INCLOSURE MATERIAL | METAL |
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
MOUNTING METHOD | TERMINAL |
TERMINAL LENGTH | 0.500 INCHES MINIMUM |
TERMINAL CIRCLE DIAMETER | 0.210 INCHES MAXIMUM |
TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
OVERALL LENGTH | 0.260 INCHES MAXIMUM |
OVERALL DIAMETER | 0.370 INCHES MAXIMUM |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |
SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
SPECIFICATION/STANDARD DATA | 80131-RELESE5400 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |