NSN 5961-00-463-8580

Part Details | TRANSISTOR

5961-00-463-8580 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: X16A565P5, 2N29265, 2N2926-5, 181252, 18-125-2, 181251, 18-125-1, 3867214P6, 386-7214P6, 3867214P6, 386-7214P6, 3867214P6, 386-7214P6, 181252, 18-125-2, 5961-00-463-8580, 00-463-8580, 5961004638580, 004638580

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59MAY 09, 196900-463-858020588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-463-8580
Part Number Cage Code Manufacturer
X16A565P503508GENERAL ELECTRIC COSEMI-CONDUCTOR PRODUCTS DEPT
2N2926-503508GENERAL ELECTRIC COSEMI-CONDUCTOR PRODUCTS DEPT
18-125-249956RAYTHEON COMPANYDBA RAYTHEON
18-125-149956RAYTHEON COMPANYDBA RAYTHEON
386-7214P654X10RAYTHEON COMPANYDBA RAYTHEON
386-7214P649956RAYTHEON COMPANYDBA RAYTHEON
386-7214P63B150RAYTHEON COMPANYDBA RAYTHEON
18-125-221845SOLITRON DEVICES, INC.
Technical Data | NSN 5961-00-463-8580
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC18.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 18.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
CURRENT RATING PER CHARACTERISTICAC0.10 AMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAF0.2 WATTS MAXIMUM
INCLOSURE MATERIAL METAL
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.265 INCHES MAXIMUM
OVERALL DIAMETER0.205 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: NPN