NSN 5961-00-465-4632
Part Details | TRANSISTOR
5961-00-465-4632 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 6191201, 619120-1, 2N4977, 5961-00-465-4632, 00-465-4632, 5961004654632, 004654632
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 14, 1970 | 00-465-4632 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-465-4632
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 619120-1 | 37695 | RAYTHEON COMPANYDBA RAYTHEON |
| 2N4977 | 15818 | TELCOM SEMICONDUCTOR INC |
Technical Data | NSN 5961-00-465-4632
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| INTERNAL JUNCTION CONFIGURATION | NP |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 30.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 30.0 MAXIMUM REVERSE GATE TO SOURCE VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | AK10.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF1.8 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.210 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.230 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
