NSN 5961-00-465-4633
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-465-4633 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: FDH6588, 6191751, 619175-1, 1N3064M0DIFIED, 1N3064M0DIFIED, 5961-00-465-4633, 00-465-4633, 5961004654633, 004654633
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 14, 1970 | 00-465-4633 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-465-4633
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| FDH6588 | 07263 | FAIRCHILD SEMICONDUCTOR CORP |
| 619175-1 | 37695 | RAYTHEON COMPANYDBA RAYTHEON |
| 1N3064M0DIFIED | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| 1N3064M0DIFIED | 15818 | TELCOM SEMICONDUCTOR INC |
Technical Data | NSN 5961-00-465-4633
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 75.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| CURRENT RATING PER CHARACTERISTIC | EB225.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF250.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.265 INCHES NOMINAL |
| OVERALL DIAMETER | 0.096 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
