NSN 5961-00-465-8306

Part Details | TRANSISTOR

5961-00-465-8306 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: DMS 80069B, 2N1132M0D, 2N1132M0D, 2N1132M0D, 6191941, 619194-1, 5961-00-465-8306, 00-465-8306, 5961004658306, 004658306

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JAN 16, 197000-465-830620588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-465-8306
Part Number Cage Code Manufacturer
DMS 80069B16236DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL
2N1132M0D04713FREESCALE SEMICONDUCTOR, INC.
2N1132M0D03877GILBERT ENGINEERING CO INC/INCONSUB OF TRANSITRON ELECTRONIC CORP
2N1132M0D12040NATIONAL SEMICONDUCTOR CORP
619194-137695RAYTHEON COMPANYDBA RAYTHEON
Technical Data | NSN 5961-00-465-8306
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 35.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
CURRENT RATING PER CHARACTERISTICAC600.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAB600.0 MILLIWATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT200.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.210 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.260 INCHES MAXIMUM
OVERALL DIAMETER0.335 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: PNP