NSN 5961-00-465-9909
Part Details | TRANSISTOR
5961-00-465-9909 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N4111, 6191071, 619107-1, 84SE108, 2N4111, 151023900, 151-0239-00, 5961-00-465-9909, 00-465-9909, 5961004659909, 004659909
Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
---|---|---|---|
59 | JAN 26, 1970 | 00-465-9909 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-465-9909
Part Number | Cage Code | Manufacturer |
---|---|---|
2N4111 | 07263 | FAIRCHILD SEMICONDUCTOR CORP |
619107-1 | 37695 | RAYTHEON COMPANYDBA RAYTHEON |
84SE108 | 21845 | SOLITRON DEVICES, INC. |
2N4111 | 21845 | SOLITRON DEVICES, INC. |
151-0239-00 | 80009 | TEKTRONIX, INC.DBA TEKTRONIX |
Technical Data | NSN 5961-00-465-9909
Characteristic | Specifications |
---|---|
SEMICONDUCTOR MATERIAL | SILICON |
INTERNAL CONFIGURATION | JUNCTION CONTACT |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 8.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
CURRENT RATING PER CHARACTERISTIC | AB2.00 AMPERES MAXIMUM AND AC5.00 AMPERES MAXIMUM |
POWER RATING PER CHARACTERISTIC | AB30.0 WATTS MAXIMUM |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
INCLOSURE MATERIAL | METAL |
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
MOUNTING METHOD | UNTHREADED HOLE |
MOUNTING FACILITY QUANTITY | 2 |
TERMINAL TYPE AND QUANTITY | 2 PIN AND 1 CASE |
OVERALL LENGTH | 0.450 INCHES MAXIMUM |
OVERALL DIAMETER | 0.875 INCHES MAXIMUM |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |
SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |