NSN 5961-00-469-5160

Part Details | DIODE SEMICONDUCTOR DEVICE

5961-00-469-5160 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.

Alternate Parts: 86220, 86-220, 26422621, 2642262-1, 26422621, 2642262-1, 26422621, 2642262-1, 26422621, 2642262-1, 5961-00-469-5160, 00-469-5160, 5961004695160, 004695160

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JAN 26, 197000-469-516020589 ( SEMICONDUCTOR DEVICE, DIODE )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-469-5160
Part Number Cage Code Manufacturer
86-22012969MICRO USPD INC
2642262-110001NAVAIR AND NAVSEA MANAGEDORIGINAL DESIGN ACTIVITY DWG NOT
2642262-154X10RAYTHEON COMPANYDBA RAYTHEON
2642262-149956RAYTHEON COMPANYDBA RAYTHEON
2642262-13B150RAYTHEON COMPANYDBA RAYTHEON
Technical Data | NSN 5961-00-469-5160
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC20000.0 MAXIMUM REVERSE VOLTAGE, PEAK
CURRENT RATING PER CHARACTERISTICCG100.00 MILLIAMPERES MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT150.0 DEG CELSIUS AMBIENT AIR
INCLOSURE MATERIAL CERAMIC
MOUNTING METHOD TERMINAL AND UNTHREADED HOLE
MOUNTING FACILITY QUANTITY2
TERMINAL LENGTH0.188 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY2 TURRET
OVERALL LENGTH3.000 INCHES MAXIMUM
OVERALL HEIGHT0.750 INCHES NOMINAL
OVERALL WIDTH0.750 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESENCAPSULATED; JUNCTION PATTERN ARRANGEMENT: PN
SPECIFICATION/STANDARD DATA10001-2642262 MANUFACTURERS SOURCE CONTROL
END ITEM IDENTIFICATIONAN/SPG 53A RADAR