NSN 5961-00-469-9906
Part Details | TRANSISTOR
5961-00-469-9906 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 3520756071, 352-0756-071, FN2173, F2131C, 5961-00-469-9906, 00-469-9906, 5961004699906, 004699906
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 28, 1970 | 00-469-9906 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-469-9906
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 352-0756-071 | 13499 | ROCKWELL COLLINS, INC.DBA GOVERNMENT SYSTEMS |
| FN2173 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
| F2131C | 21845 | SOLITRON DEVICES, INC. |
Technical Data | NSN 5961-00-469-9906
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 4.0 MAXIMUM REVERSE GATE TO SOURCE VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | BR5.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AG300.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL TYPE AND QUANTITY | 3 RIBBON |
| OVERALL LENGTH | 0.210 INCHES NOMINAL |
| OVERALL DIAMETER | 0.080 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NP |
