NSN 5961-00-474-8511
Part Details | TRANSISTOR
5961-00-474-8511 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: DMS 80064B, 2N4353, C532000494, 5961-00-474-8511, 00-474-8511, 5961004748511, 004748511
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUN 18, 1974 | 00-474-8511 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-474-8511
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| DMS 80064B | 16236 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 2N4353 | 14936 | GENERAL SEMICONDUCTOR INC |
| C532000494 | 88818 | KEARFOTT CORPORATIONDBA KEARFOTT |
Technical Data | NSN 5961-00-474-8511
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 10.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE |
| CURRENT RATING PER CHARACTERISTIC | AD100.00 MILLIAMPERES MAXIMUM AND AK10.00 MICROAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AG250.0 MILLIWATTS MAXIMUM |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.190 INCHES NOMINAL |
| OVERALL DIAMETER | 0.219 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
