NSN 5961-00-477-1649
Part Details | THYRISTOR SEMICONDUCTOR DEVICE
5961-00-477-1649 A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: C350TX1, C350T, 5961-00-477-1649, 00-477-1649, 5961004771649, 004771649
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAR 03, 1972 | 00-477-1649 | 33096 ( SEMICONDUCTOR DEVICE, THYRISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-477-1649
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| C350TX1 | 09214 | GENERAL ELECTRIC COSEMI-CONDUCTOR PRODUCTS DEPT |
| C350T | 09214 | GENERAL ELECTRIC COSEMI-CONDUCTOR PRODUCTS DEPT |
Technical Data | NSN 5961-00-477-1649
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 900.0 MAXIMUM BREAKOVER VOLTAGE, DC |
| CURRENT RATING PER CHARACTERISTIC | AD175.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF20.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 120.0 DEG CELSIUS CASE |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | PRESS FIT |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD W/TERMINAL LUG AND 1 CASE |
| OVERALL LENGTH | 0.565 INCHES NOMINAL |
| OVERALL DIAMETER | 1.650 INCHES NOMINAL |
| OVERALL HEIGHT | 0.565 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNPN |
