NSN 5961-00-481-0993

Part Details | TRANSISTOR

5961-00-481-0993 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N3331A, 2N3331, 2N3331, RELEASE4671, 10029855103, 10029855-103, AK0108156, 2N3331, 2N3331, 2N3331, 5961-00-481-0993, 00-481-0993, 5961004810993, 004810993

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59SEP 16, 197000-481-099320588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-481-0993
Part Number Cage Code Manufacturer
2N3331AC7191ADELCO ELEKTRONIK GMBH
2N3331C7191ADELCO ELEKTRONIK GMBH
2N333180131ELECTRONIC INDUSTRIES ASSOCIATION
RELEASE467180131ELECTRONIC INDUSTRIES ASSOCIATION
10029855-10394580HONEYWELL INTERNATIONAL INC.DBA HONEYWELL
AK0108156D0894ROHDE & SCHWARZ GMBH & CO. KG
2N333117856SILICONIX INCORPORATEDDIV SILICONIX
2N333115818TELCOM SEMICONDUCTOR INC
2N333101295TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS
Technical Data | NSN 5961-00-481-0993
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION FIELD EFFECT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC15.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
CURRENT RATING PER CHARACTERISTICAK10.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAB300.0 MILLIWATTS MAXIMUM
INCLOSURE MATERIAL METAL
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY4 UNINSULATED WIRE LEAD
OVERALL LENGTH0.210 INCHES MAXIMUM
OVERALL DIAMETER0.230 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIFICATION/STANDARD DATA80131-RELESE4671 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION